Ion implantation services with a wide range of ion species are available from low to high energies. High temperature ion implantation is available that is unique and advantageous in the world. The high temperature ion implantation is well suited for compound semiconductors such as SiC used for next generation power device. This technology will enable to achieve the new frontier in power electronics and environmental energy areas.
Available Technologies
Various services are available from specialty implantation for research and development use to production implantation.
Flexible sample handlings are provided for a chip size to 6 inch wafer size with careful treatments.
Please contact us on our services and expertise that may suit for your requests.
Kinds of Atoms for Ion Implantation exceed 60
Over 60 atoms such as Al, F, Si as well as B, P, N, C etc. are available to implant.
Wide Range of Implantation Conditions
Wide range of implant energies from 10keV to 8MeV are available.
Ion implantation to compound semiconductor such as SiC is available.
Kinds of Materials: Si, SiC, GaN, InP, MgO, Quartz and others
Implantation Energy: 10keV to 5MeV
Temperature: Room Temperature (RT) to 600C
Ion species: more than over 60
Analysis and Evaluation after Implantation is Available
Expertise in analysis exists that enables the analysis and evaluation after the implantation process. Confirming the depth of implantation and the morphology, reliable results will be delivered.
Equipments
- 200KeV(B) Ion Implantation
- 200KeV(C) Ion Implantation
- 400KeV Ion Implantation
- 8MeV Ion Implantation